september 2012 FDP030N06B_f102 channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDP030N06B_f102 rev.c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* * package limitation current is 120a. thermal characteristics symbol parameter FDP030N06B_f102 units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 195* a - continuous (t c = 100 o c, silicon limited) 138* - continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 780 a e as single pulsed avalanche energy (note 2) 600 mj dv/dt peak diode recovery dv/dt (not e 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 205 w - derate above 25 o c 1.37 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter FDP030N06B_f102 units r jc thermal resistance, junction to case, max 0.73 o c/w r ja thermal resistance, junction to ambient, max 62.5 FDP030N06B_f102 n-channel powertrench ? mosfet 60v, 195a, 3.1m features ? r ds(on) = 2.67m ( typ.) @ v gs = 10v, i d = 100a ? low fom r ds(on) *q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ? rohs compliant description this n-channel mosfet is produced using fairchild semi con- ductors advanced powertrench? process that has been tail ored to minimize the on-state resistance while maintaining sup erior switching performance. application ? synchronous rectification for atx / server / telecom p su ? battery protection circuit ? dc motor drives and uninterruptible power supplies g s d to-220 g d s
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package description quantity FDP030N06B FDP030N06B_f102 to-220 f102: trimmed leads 5 0 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.03 - v/ o c i dss zero gate voltage drain current v ds = 48v, v gs = 0v - - 1 a i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2 - 4 v r ds(on) static drain to source on resistance v gs = 10v, i d = 100a - 2.67 3.1 m g fs forward transconductance v ds = 10v, i d = 100a - 206 - s c iss input capacitance v ds = 30v, v gs = 0v f = 1mhz - 6035 8030 pf c oss output capacitance - 1685 2240 pf c rss reverse transfer capacitance - 55 - pf c oss(er) energy related output capacitance v ds = 30v, v gs = 0v - 2619 - pf q g(tot) total gate charge at 10v v ds = 30v, i d = 100a v gs = 10v (note 4) - 76 99 nc q gs gate to source gate charge - 29 - nc q gd gate to drain miller charge - 12 - nc v plateau gate plateau volatge - 5.2 - v q oss output charge v ds = 30v, v gs = 0v - 92.4 - nc t d(on) turn-on delay time v dd = 30v, i d = 100a v gs = 10v, r gen = 4.7 (note 4) - 32 74 ns t r turn-on rise time - 33 76 ns t d(off) turn-off delay time - 56 122 ns t f turn-off fall time - 23 56 ns esr equivalent series resistance (g-s) drain open, f = 1mh z - 2.0 - i s maximum continuous drain to source diode forward curr ent - - 195* a i sm maximum pulsed drain to source diode forward current - - 780 a v sd drain to source diode forward voltage v gs = 0v, i sd = 100a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 100a di f /dt = 100a/ s - 71 - ns q rr reverse recovery charge - 78 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. l = 3mh, i as = 20a, starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typ ical characteristics
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 2 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 2 3 4 5 6 7 1 10 100 400 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 100 200 300 400 500 1.5 2.0 2.5 3.0 3.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 400 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 60 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20 40 60 80 90 0 2 4 6 8 10 *note: i d = 100a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *notes: 1. v gs = 10v 2. i d = 100a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 1 10 100 0.01 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.73 o c/w dc 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 r jc = 0.73 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss , [ j] v ds , drain to source voltage [v] 0.001 0.01 0.1 1 10 100 1000 1 10 100 200 t j = 25 o c t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a) -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c]
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figu re 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.03 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.73 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms g s d g s d
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP030N06B_f102 n-channel powertrench ? mosfet FDP030N06B_f102 rev.c0 www.fairchildsemi.com 8 to-220 (f102: trimmed leads) mechanical dimensions
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